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Enhancement and anisotropy of the Landau g factor in modulation-doped Al[sub 0.22]Ga[sub 0.78]N/GaN heterostructures.

Authors :
Zheng, Z.W.
Shen, B.
Gui, Y.S.
Qiu, Z.J.
Jiang, C.P.
Tang, N.
Liu, J.
Chen, D.J.
Zhou, H.M.
zhang, R.
Shi, Y.
Zheng, Y.D.
Guo, S.L.
Chu, J.H.
Hoshino, K.
Arakawa, Y.
Source :
Journal of Applied Physics. 3/1/2004, Vol. 95 Issue 5, p2473-2476. 4p. 5 Graphs.
Publication Year :
2004

Abstract

Spin splitting of the two-dimentional electron gas (2DEG) in modulation-doped Al[sub 0.22]Ga[sub 0.78]N/GaN heterostructures has been studied by means of magnetotransport measurements at low temperatures and high magnetic fields. The spin splitting is observed in Shubnikov–de Haas oscillations at a magnetic field higher than 5.4 T and a temperature of 1.4 K. The effective g factor g[sup *] is enhanced due to the exchange interaction of the 2DEG at high densities. The ratio of the transverse effective g factor g[sub ⊥][sup *] and the longitudinal effective g factor g[sub ∥][sup *] is g[sub ⊥][sup *]/g[sub ∥][sup *]=2.6 indicating the large difference between g[sub ∥][sup *] and g[sub ⊥][sup *]. It is demonstrated that the anisotropy of the g[sup *] is due to the strong polarization-induced electric field at the heterointerface. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00218979
Volume :
95
Issue :
5
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
12297790
Full Text :
https://doi.org/10.1063/1.1642732