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Nonvolatile memory based on Ge/Si hetero-nanocrystals
- Source :
-
Applied Surface Science . Mar2004, Vol. 224 Issue 1-4, p394. 5p. - Publication Year :
- 2004
-
Abstract
- Time characteristics have been simulated numerically both for n- and p-channel memory based on Ge/Si hetero-nanocrystals. Owing to the advantages of the staircase potential barrier and the higher band offset on valence band, the retention time of the memory could achieve the increase of several orders while the programming time still hold the same order approximately, compared with the memory based on Si nanocrystals. Therefore, the present memory device would be expected to solve the contradiction between high-speed programming and long retention time. If so, this type of device would be a promising non-volatile memory for future VLSI. [Copyright &y& Elsevier]
- Subjects :
- *NANOCRYSTALS
*GERMANIUM
*SILICON
*VERY large scale circuit integration
Subjects
Details
- Language :
- English
- ISSN :
- 01694332
- Volume :
- 224
- Issue :
- 1-4
- Database :
- Academic Search Index
- Journal :
- Applied Surface Science
- Publication Type :
- Academic Journal
- Accession number :
- 12236666
- Full Text :
- https://doi.org/10.1016/j.apsusc.2003.08.079