Angular Effects of Heavy-Ion Strikes on Single-Event Upset Response of Flip-Flop Designs in 16-nm Bulk FinFET Technology.

MLA

Zhang, Hangfang, et al. “Angular Effects of Heavy-Ion Strikes on Single-Event Upset Response of Flip-Flop Designs in 16-Nm Bulk FinFET Technology.” IEEE Transactions on Nuclear Science, vol. 64, no. 1, part 1, Jan. 2017, pp. 491–96. EBSCOhost, https://doi.org/10.1109/TNS.2016.2637876.

APA

Zhang, H., Jiang, H., Assis, T. R., Ball, D. R., Narasimham, B., Anvar, A., Massengill, L. W., & Bhuva, B. L. (2017). Angular Effects of Heavy-Ion Strikes on Single-Event Upset Response of Flip-Flop Designs in 16-nm Bulk FinFET Technology. IEEE Transactions on Nuclear Science, 64(1, part 1), 491–496. https://doi.org/10.1109/TNS.2016.2637876

Chicago

Zhang, Hangfang, Hui Jiang, Thiago R. Assis, Dennis R. Ball, Balaji Narasimham, Ali Anvar, Lloyd W. Massengill, and Bharat L. Bhuva. 2017. “Angular Effects of Heavy-Ion Strikes on Single-Event Upset Response of Flip-Flop Designs in 16-Nm Bulk FinFET Technology.” IEEE Transactions on Nuclear Science 64 (1, part 1): 491–96. doi:10.1109/TNS.2016.2637876.