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Analysis of TID Process, Geometry, and Bias Condition Dependence in 14-nm FinFETs and Implications for RF and SRAM Performance.
- Source :
-
IEEE Transactions on Nuclear Science . Jan2017, Vol. 64 Issue 1, part 1, p285-292. 8p. - Publication Year :
- 2017
-
Abstract
- Total ionizing dose results are provided, showing the effects of different threshold adjust implant processes and irradiation bias conditions of 14-nm FinFETs. Minimal radiation-induced threshold voltage shift across a variety of transistor types is observed. Off-state leakage current of nMOSFET transistors exhibits a strong gate bias dependence, indicating electrostatic gate control of the sub-fin region and the corresponding parasitic conduction path are the largest concern for radiation hardness in FinFET technology. The high- V\textit {th} transistors exhibit the best irradiation performance across all bias conditions, showing a reasonably small change in off-state leakage current and V\textit {th} , while the low- V\textit {th} transistors exhibit a larger change in off-state leakage current. The “ worst-case” bias condition during irradiation for both pull-down and pass-gate nMOSFETs in static random access memory is determined to be the on-state ( V\textit {gs}=V\textit {dd} ). We find the nMOSFET pull-down and pass-gate transistors of the SRAM bit-cell show less radiation-induced degradation due to transistor geometry and channel doping differences than the low- V\textit {th} transistor. Near-threshold operation is presented as a methodology for reducing radiation-induced increases in off-state device leakage current. In a 14-nm FinFET technology, the modeling indicates devices with high channel stop doping show the most robust response to TID allowing stable operation of ring oscillators and the SRAM bit-cell with minimal shift in critical operating characteristics. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00189499
- Volume :
- 64
- Issue :
- 1, part 1
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Nuclear Science
- Publication Type :
- Academic Journal
- Accession number :
- 121745586
- Full Text :
- https://doi.org/10.1109/TNS.2016.2634538