Cite
Dislocation nucleation in 4H silicon carbide epitaxy
MLA
Ha, S., et al. “Dislocation Nucleation in 4H Silicon Carbide Epitaxy.” Journal of Crystal Growth, vol. 262, no. 1–4, Feb. 2004, p. 130. EBSCOhost, https://doi.org/10.1016/j.jcrysgro.2003.09.054.
APA
Ha, S., Chung, H. J., Nuhfer, N. T., & Skowronski, M. (2004). Dislocation nucleation in 4H silicon carbide epitaxy. Journal of Crystal Growth, 262(1–4), 130. https://doi.org/10.1016/j.jcrysgro.2003.09.054
Chicago
Ha, S., H.J. Chung, N.T. Nuhfer, and M. Skowronski. 2004. “Dislocation Nucleation in 4H Silicon Carbide Epitaxy.” Journal of Crystal Growth 262 (1–4): 130. doi:10.1016/j.jcrysgro.2003.09.054.