Development of an analytical mobility model for the simulation of ultra-thin single- and double-gate SOI MOSFETs

An analytical model for the electron mobility limited by surface optical phonons is developed and applied to the simulation of ultra-thin SOI MOSFETs. The developed model reproduces the main features of experimental data recently reported in the literature and has been implemented in a conventional device simulator. An application to the analysis of technological options such as doping concentration and silicon thickness in SOI MOSFETs, is reported. [Copyright &y& Elsevier]