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Subthreshold behavior of triple-gate MOSFETs on SOI material
- Source :
-
Solid-State Electronics . Apr2004, Vol. 48 Issue 4, p529. 6p. - Publication Year :
- 2004
-
Abstract
- The fabrication of n-type multi-wire MOSFETs on SOI material with triple-gate structures is presented. The output and transfer characteristics of devices with a gate length of 70 nm and a MESA width of 22 nm demonstrate clearly the suppression of short channel effects (SCE). In addition, these triple-gate structures are compared with planar SOI devices of comparable dimensions. The influence of biasing the substrate (back gate) is analyzed and compared to simulation data. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 00381101
- Volume :
- 48
- Issue :
- 4
- Database :
- Academic Search Index
- Journal :
- Solid-State Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 12167919
- Full Text :
- https://doi.org/10.1016/j.sse.2003.09.027