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Low-Temperature Ohmic Contact Formation in AlN/GaN HEMT Using Microwave Annealing.
- Source :
-
IEEE Transactions on Electron Devices . Mar2017, Vol. 64 Issue 3, p1385-1389. 5p. - Publication Year :
- 2017
-
Abstract
- In this brief, a low-temperature microwave annealing (MWA) method is demonstrated for the formation of ohmic contact to AlN/GaN high electron mobility transistors (HEMTs) for the first time. Compared with the traditional rapid thermal annealing (RTA) technique, MWA-HEMT can achieve a comparable low ohmic contact resistance with much smoother surface of ohmic contacts. Transmission electron microscopy results show that no direct current path connecting the 2-D electron gas and the metal is formed. Temperature-dependent contact resistance measurement indicates that field emission tunneling dominates the current transport mechanism in ohmic contact formation. The maximum dc output current density of 1.4 A/mm and the peak extrinsic transconductance ( G\textsf {m} ) of 270 mS/mm are measured on 2 \times 8 \,\,\sf \mu $m^2$ gate MWA-HEMTs. Besides, MWA-HEMTs have higher {I}_{ \mathrm{ ON}}/{I}_{ \mathrm{ OFF}} ratio due to the lower gate leakage current than that of RTA-HEMTs. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 64
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 121551475
- Full Text :
- https://doi.org/10.1109/TED.2017.2647963