Differential carrier lifetime in InGaN-based light-emitting diodes obtained by small-signal frequency-domain measurements.

MLA

Reklaitis, I., et al. “Differential Carrier Lifetime in InGaN-Based Light-Emitting Diodes Obtained by Small-Signal Frequency-Domain Measurements.” Journal of Applied Physics, vol. 121, no. 3, Jan. 2017, pp. 1–6. EBSCOhost, https://doi.org/10.1063/1.4973903.

APA

Reklaitis, I., Nippert, F., Kudžma, R., Malinauskas, T., Karpov, S., Pietzonka, I., Lugauer, H. J., Strassburg, M., Vitta, P., Tomašiūnas, R., & Hoffmann, A. (2017). Differential carrier lifetime in InGaN-based light-emitting diodes obtained by small-signal frequency-domain measurements. Journal of Applied Physics, 121(3), 1–6. https://doi.org/10.1063/1.4973903

Chicago

Reklaitis, I., F. Nippert, R. Kudžma, T. Malinauskas, S. Karpov, I. Pietzonka, H. J. Lugauer, et al. 2017. “Differential Carrier Lifetime in InGaN-Based Light-Emitting Diodes Obtained by Small-Signal Frequency-Domain Measurements.” Journal of Applied Physics 121 (3): 1–6. doi:10.1063/1.4973903.