Quantitative estimation of exciton quenching strength at interface of charge injection layers and organic semiconductor.

The performance of polymer light emitting diodes (PLEDs) degrades due to exciton quenching at the interface with charge injection layers and electrodes. We investigate the photo-physics of singlet excitons in Poly (9, 9-dioctylfluorene-alt-benzothiadiazole) (F8BT) conjugated polymer interfaced with various commonly used hole and electron injection layers. Absolute, steady-state and transient photoluminescence (PL) studies are carried out on pristine F8BT film and films with injection layer/F8BT to understand the role of injection layers on exciton quenching. Exciton quenching by the charge injection layers is treated by accounting for both exciton diffusion and the non-radiative transfer of energy to the charge injection layer. The non-radiative transfer of energy is modelled using dipole-dipole interaction theory coupled with diffusion of excitons, from which we obtain the exciton capture radius ( x 0 ) in the range of 1–7 nm. We also correlate x 0 with PL decay time (τ) using the relation τ α 1/ x 0 3 . The steady-state PL yield for each case also shows correlation with the PL decay lifetime. This study provides interesting insight on the selection criterion for injection layer to be used in PLEDs for minimizing optical losses while preserving the electronic injection properties. [ABSTRACT FROM AUTHOR]