Specific features of electron scattering in uniaxially deformed n -Ge single crystals in the presence of radiation defects.

Temperature dependencies for concentration of electrons and the Hall mobility for unirradiated and irradiated by the flow of electronssingle crystals, with the energy of, for different values of uniaxial pressures along the crystallographic directions,andare obtained on the basis of piezo-Hall effect measurements. Non-typical growth of the Hall mobility of electrons for irradiated single crystalsin comparison with unirradiated with the increasing of value of uniaxial pressures along the crystallographic directions(for the entire range of the investigated temperatures) and(to temperatures) has been revealed. Such an effect of the Hall mobility increase for uniaxially deformed single crystalsis explained by the reduction of gradients of a resistance as a result of reduction in the amplitude of a large-scale potential with deformation and concentration of chargedA-centers in the process of their recharge by the increasing of uniaxial pressure and consequently the probability of scattering on these centers. Theoretical calculations for temperature dependencies of the Hall mobility for uniaxially deformed single crystalsin terms of the electrons scattering on the ions of shallow donors, acoustic, optical and intervalley phonons, regions of disordering and large-scale potential is good conformed to the corresponding experimental results at temperaturesT<220 K for the case of uniaxial pressures along the crystallographic directionsandand for temperatureswhen the uniaxial pressure is directed along the crystallographic directions. The mechanism of electron scattering on a charged radiation defects (which correspond to the deep energy levels ofA-centers) ‘is turned off’ for the given temperatures due to the uniaxial pressure. Reduction of the Hall mobility in transition through a maximum of dependencewith the increasing temperature for cases of the uniaxial deformation of the irradiated single crystalsalong the crystallographic directionsandis explained by the deforming redistribution of electrons between the minima of conduction band of germanium with different mobility. [ABSTRACT FROM AUTHOR]