Cite
Low p-type contact resistance by field-emission tunneling in highly Mg-doped GaN.
MLA
Hironori Okumura, et al. “Low P-Type Contact Resistance by Field-Emission Tunneling in Highly Mg-Doped GaN.” Applied Physics Letters, vol. 109, no. 25, Dec. 2016, pp. 252101-1-252101–05. EBSCOhost, https://doi.org/10.1063/1.4972408.
APA
Hironori Okumura, Martin, D., & Grandjean, N. (2016). Low p-type contact resistance by field-emission tunneling in highly Mg-doped GaN. Applied Physics Letters, 109(25), 252101-1-252101–252105. https://doi.org/10.1063/1.4972408
Chicago
Hironori Okumura, Denis Martin, and Nicolas Grandjean. 2016. “Low P-Type Contact Resistance by Field-Emission Tunneling in Highly Mg-Doped GaN.” Applied Physics Letters 109 (25): 252101-1-252101–5. doi:10.1063/1.4972408.