Two-terminal nonvolatile resistive switching memory devices based on n-CdSe NR/p-Si heterojunctions.

Two-terminal nonvolatile resistive switching (RS) memory devices based on n -CdSe nanoribbon (NR)/ p -Si heterojunction were fabricated. These memory devices exhibited excellent memory characteristics with high current ON/OFF ratio exceeding six orders of magnitude, long retention time over 10 4 s, and good endurance over 6 months. The capacitance-voltage ( C - V ) measurement was carried out to confirm the electrons traping and detrapping processes in interface oxide layer. The high-performance of memory devices and simple processing techniques will offer new opportunities for memory applications of one-dimensional nanomaterials. [ABSTRACT FROM AUTHOR]