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Ultraviolet responses of a heterojunction Si quantum dot solar cell.
- Source :
-
Nanotechnology . 1/20/2017, Vol. 28 Issue 3, p1-1. 1p. - Publication Year :
- 2017
-
Abstract
- We investigated the ultraviolet (UV) responses of a heterojunction Si quantum dot (QD) solar cell consisting of p-type Si-QDs fabricated on a n-type crystalline Si (p-Si-QD/n-c-Si HJSC). The UV responses were compared with a conventional n-type crystalline Si solar cell (n-c-Si SC). The external and internal quantum efficiency results of the p-Si-QD/n-c-Si HJSC exhibited a clear enhancement in the UV responses (300–400 nm), which was not observed in the n-c-Si SC. Based on the results of the cell reflectance and bias-dependent responses, we expect that almost all UV responses occur in the p-Si-QD layer, and the generated carriers can be transported via the Si-QD layer due to the formation of a sufficient electric filed. As a result, a high power conversion efficiency of 14.5% was achieved from the p-Si-QD/n-c-Si HJSC. By reducing the thickness of the n-Si substrate from 650 μm to 300 μm, more enhanced power conversion efficiency of 14.8% was obtained which is the highest value among the reported Si-QD based solar cells to date. [ABSTRACT FROM AUTHOR]
- Subjects :
- *QUANTUM dots spectra
*ULTRAVIOLET radiation
*SOLAR batteries
Subjects
Details
- Language :
- English
- ISSN :
- 09574484
- Volume :
- 28
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- Nanotechnology
- Publication Type :
- Academic Journal
- Accession number :
- 120283045
- Full Text :
- https://doi.org/10.1088/1361-6528/28/3/035402