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Optimization-based approach for scalable small-signal and noise model extraction of GaN-on-SiC HEMTs.
- Source :
-
International Journal of Numerical Modelling . Jan/Feb2017, Vol. 30 Issue 1, pn/a-N.PAG. 16p. - Publication Year :
- 2017
-
Abstract
- An optimization-based method allowing a straightforward extraction of scalable small-signal equivalent-circuit models for high-frequency active devices is proposed. The approach only requires a set of devices with a fixed number of fingers and scaling unit gate widths: no dummy structures or bias conditions potentially harmful for the devices are needed. The extraction method is then demonstrated by presenting in full a sample extraction, carried out on a 0.25 GaN-on-SiC HEMT technology provided by Selex-ES. The example also includes the extraction of a noise model, by means of a well-known noise-temperature approach. Both the small-signal and noise models agree well with the experimental data. Copyright © 2015 John Wiley & Sons, Ltd. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 08943370
- Volume :
- 30
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- International Journal of Numerical Modelling
- Publication Type :
- Academic Journal
- Accession number :
- 120155810
- Full Text :
- https://doi.org/10.1002/jnm.2135