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Optimization-based approach for scalable small-signal and noise model extraction of GaN-on-SiC HEMTs.

Authors :
Colangeli, Sergio
Ciccognani, Walter
Cleriti, Riccardo
Palomba, Mirko
Limiti, Ernesto
Source :
International Journal of Numerical Modelling. Jan/Feb2017, Vol. 30 Issue 1, pn/a-N.PAG. 16p.
Publication Year :
2017

Abstract

An optimization-based method allowing a straightforward extraction of scalable small-signal equivalent-circuit models for high-frequency active devices is proposed. The approach only requires a set of devices with a fixed number of fingers and scaling unit gate widths: no dummy structures or bias conditions potentially harmful for the devices are needed. The extraction method is then demonstrated by presenting in full a sample extraction, carried out on a 0.25 GaN-on-SiC HEMT technology provided by Selex-ES. The example also includes the extraction of a noise model, by means of a well-known noise-temperature approach. Both the small-signal and noise models agree well with the experimental data. Copyright © 2015 John Wiley & Sons, Ltd. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
08943370
Volume :
30
Issue :
1
Database :
Academic Search Index
Journal :
International Journal of Numerical Modelling
Publication Type :
Academic Journal
Accession number :
120155810
Full Text :
https://doi.org/10.1002/jnm.2135