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4H-SiC Schottky diode arrays for X-ray detection.
- Source :
-
Nuclear Instruments & Methods in Physics Research Section A . Dec2016, Vol. 840, p145-152. 8p. - Publication Year :
- 2016
-
Abstract
- Five SiC Schottky photodiodes for X-ray detection have been electrically characterized at room temperature. One representative diode was also electrically characterized over the temperature range 20°C to 140 °C. The performance at 30 °C of all five X-ray detectors, in both current mode and for photon counting X-ray spectroscopy was investigated. The diodes were fabricated in an array form such that they could be operated as either a 2×2 or 1×3 pixel array. Although the devices showed double barrier heights, high ideality factors and higher than expected leakage current at room temperature (12 nA/cm 2 at an internal electric field of 105 kV/cm), they operated as spectroscopic photon counting soft X-ray detectors uncooled at 30 °C. The measured energy resolution ( FWHM at 17.4 keV, Mo Kα) varied from 1.36 to 1.68 keV among different diodes. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 01689002
- Volume :
- 840
- Database :
- Academic Search Index
- Journal :
- Nuclear Instruments & Methods in Physics Research Section A
- Publication Type :
- Academic Journal
- Accession number :
- 120016505
- Full Text :
- https://doi.org/10.1016/j.nima.2016.10.002