Cite
Properties of hafnium-aluminum-zinc-oxide thin films for the application of oxide-transistors.
MLA
Lee, Sang-Hyuk, et al. “Properties of Hafnium-Aluminum-Zinc-Oxide Thin Films for the Application of Oxide-Transistors.” Thin Solid Films, vol. 620, Dec. 2016, pp. 82–87. EBSCOhost, https://doi.org/10.1016/j.tsf.2016.08.075.
APA
Lee, S.-H., Jun, H.-S., Park, J.-H., Kim, W., Oh, S., & Park, J.-S. (2016). Properties of hafnium-aluminum-zinc-oxide thin films for the application of oxide-transistors. Thin Solid Films, 620, 82–87. https://doi.org/10.1016/j.tsf.2016.08.075
Chicago
Lee, Sang-Hyuk, Hyun-Sik Jun, Ju-Hee Park, Won Kim, Saeroonter Oh, and Jin-Seok Park. 2016. “Properties of Hafnium-Aluminum-Zinc-Oxide Thin Films for the Application of Oxide-Transistors.” Thin Solid Films 620 (December): 82–87. doi:10.1016/j.tsf.2016.08.075.