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Modeling of Electronic Structure of a Monolayer Superlattice SiC/GeC.

Authors :
Basalaev, Yu.
Kosobutskii, A.
Malysheva, E.
Source :
Russian Physics Journal. Nov2016, Vol. 59 Issue 7, p1111-1114. 4p.
Publication Year :
2016

Abstract

The article reports on the electronic structure of superlattices silicon (SiC) and germanium carbides (GeC). Topics mentioned include the calculations of the electronic structure of SiC and GeC, the Brillouin zone of the superlattices, and the binary crystal structure. Also mentioned are the valence bond calculation and the band gap widths of SiC and GeC.

Details

Language :
English
ISSN :
10648887
Volume :
59
Issue :
7
Database :
Academic Search Index
Journal :
Russian Physics Journal
Publication Type :
Academic Journal
Accession number :
119539642
Full Text :
https://doi.org/10.1007/s11182-016-0877-6