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Modeling of Electronic Structure of a Monolayer Superlattice SiC/GeC.
- Source :
-
Russian Physics Journal . Nov2016, Vol. 59 Issue 7, p1111-1114. 4p. - Publication Year :
- 2016
-
Abstract
- The article reports on the electronic structure of superlattices silicon (SiC) and germanium carbides (GeC). Topics mentioned include the calculations of the electronic structure of SiC and GeC, the Brillouin zone of the superlattices, and the binary crystal structure. Also mentioned are the valence bond calculation and the band gap widths of SiC and GeC.
Details
- Language :
- English
- ISSN :
- 10648887
- Volume :
- 59
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- Russian Physics Journal
- Publication Type :
- Academic Journal
- Accession number :
- 119539642
- Full Text :
- https://doi.org/10.1007/s11182-016-0877-6