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Pressure effect on the magnetism of the diluted magnetic semiconductor (Ba1-xKx)(Zn1-yMny)2As2 with independent spin and charge doping.

Authors :
Sun, F.
Li, N. N.
Chen, B. J.
Jia, Y. T.
Zhang, L. J.
Li, W. M.
Zhao, G. Q.
Xing, L. Y.
Fabbris, G.
Wang, Y. G.
Deng, Z.
Uemura, Y. J.
Mao, H. K.
Haskel, D.
Yang, W. G.
Jin, C. Q.
Source :
Physical Review B. Jun2016, Vol. 93 Issue 22, p1-1. 1p.
Publication Year :
2016

Abstract

We used x-ray magnetic circular dichroism (XMCD) to probe the ferromagnetic properties of As p-symmetric (4p) states in the recently synthesized diluted magnetic semiconductor (Ba1-xKx)(Zn1-yMny)2As2 system under ambient- and high-pressure conditions. The As K-edge XMCD signal scales with the sample magnetization (dominated by Mn) and scales with the ferromagnetic ordering temperature Tc, and hence it is representative of the bulk magnetization. The XMCD intensity gradually decreases upon compression and vanishes at around 25 GPa, indicating quenching of ferromagnetism at this pressure. Transport measurements show a concomitant increase in conductivity with pressure, leading to a nearly metallic state at about the same pressure where magnetic order collapses. High-pressure x-ray diffraction shows an absence of structural transitions to 40 GPa. The results indicate that the mobility of doped holes, probed by both transport and x-ray absorption spectroscopy (4p band broadening), is intimately connected with the mechanism of magnetic ordering in this class of compounds and that its control using external pressure provides an alternative route for tuning the magnetic properties in diluted magnetic semiconductor materials. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
24699950
Volume :
93
Issue :
22
Database :
Academic Search Index
Journal :
Physical Review B
Publication Type :
Academic Journal
Accession number :
119448629
Full Text :
https://doi.org/10.1103/PhysRevB.93.224403