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Determination of band offset in MgO/InP heterostructure by X-ray photoelectron spectroscopy.
- Source :
-
Vacuum . Dec2016, Vol. 134, p136-140. 5p. - Publication Year :
- 2016
-
Abstract
- X-ray photoelectron spectroscopy was used to measure the valence-band offset ( ΔE V ) of MgO/InP heterostructure. Two sets of core level pairs in the MgO/InP system were used to demonstrate the accuracy of the calculation, the ΔE V value was the same (5.33 ± 0.15 eV) when using the In 3d 3/2 , Mg 2p pair and In 3d 5/2 , Mg 2p pair, indicating our calculations are accuracy and reasonable. Taking the band gaps of 7.83 eV for MgO and 1.34 eV for InP into consideration, a type-I band alignment of MgO/InP heterostructure was obtained with conduction band offset (CBO) of 1.16 ± 0.15 eV for two sets of core level pairs, indicating a nested interface band alignment heterostructure was prepared. The accurate determination of the band alignment of MgO/InP has a significant impact on the performance of InP-based devices. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 0042207X
- Volume :
- 134
- Database :
- Academic Search Index
- Journal :
- Vacuum
- Publication Type :
- Academic Journal
- Accession number :
- 119155861
- Full Text :
- https://doi.org/10.1016/j.vacuum.2016.10.012