Back to Search
Start Over
Improvement of the positive bias stability of a-IGZO TFTs by the HCN treatment.
- Source :
-
Solid-State Electronics . Dec2016, Vol. 126, p87-91. 5p. - Publication Year :
- 2016
-
Abstract
- In recent years, many researchers have attempted to improve the bias stability of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). In this study, the hydrogen cyanide (HCN) treatment was carried out to improve the positive bias stability of bottom-gate a-IGZO TFTs. The HCN treatment was performed using a 0.1 M HCN solution with a pH of 10 at room temperature. Before applying the positive bias stress, there were no differences in the major electrical properties, including the saturation mobility ( μ sat ), threshold voltage (V th ), and subthreshold swing (S/S), between HCN-treated and non-HCN-treated devices. However, after applying the positive bias stress, the HCN-treated device showed superior bias stability compared to the non-HCN-treated device. This difference is associated with the passivation of the defect states and the surface of the back-channel layer of the HCN-treated device by cyanide ions. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00381101
- Volume :
- 126
- Database :
- Academic Search Index
- Journal :
- Solid-State Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 119000075
- Full Text :
- https://doi.org/10.1016/j.sse.2016.09.010