Cite
Interplay between relaxation and Sn segregation during thermal annealing of GeSn strained layers.
MLA
Comrie, C. M., et al. “Interplay between Relaxation and Sn Segregation during Thermal Annealing of GeSn Strained Layers.” Journal of Applied Physics, vol. 120, no. 14, Oct. 2016, pp. 1–7. EBSCOhost, https://doi.org/10.1063/1.4964692.
APA
Comrie, C. M., Mtshali, C. B., Sechogela, P. T., Santos, N. M., van Stiphout, K., Loo, R., Vandervorst, W., & Vantomme, A. (2016). Interplay between relaxation and Sn segregation during thermal annealing of GeSn strained layers. Journal of Applied Physics, 120(14), 1–7. https://doi.org/10.1063/1.4964692
Chicago
Comrie, C. M., C. B. Mtshali, P. T. Sechogela, N. M. Santos, K. van Stiphout, R. Loo, W. Vandervorst, and A. Vantomme. 2016. “Interplay between Relaxation and Sn Segregation during Thermal Annealing of GeSn Strained Layers.” Journal of Applied Physics 120 (14): 1–7. doi:10.1063/1.4964692.