The Organosilicon thin Film Deposited Using an Atmospheric Pressure Dual-Frequency 50 kHz/33 MHz Frequency MicroPlasma Jet.

In this paper, an atmospheric pressure dual-frequency (50 kHz/33 MHz) micro-plasma jet was used to deposit organosilicon film. The discharge generated in atmospheric environment. Plasma composition was characterized by optical emission spectroscopy. With introduction of tetraethyl orthosilicate, we observed various spectra, for example Si(251.6 nm), OH(308.9 nm), C(247.8 nm), O(777.5 nm). Abundant reactive radical species which are benefit to film deposition were generated in plasma. The deposited film was characterized by scanning electron microscopy, X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. The film is mostly composed of Si and O. The film has Si-O-Si backbone with a small number of organic component (-CHx). (© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]