Role of V-pits in the performance improvement of InGaN solar cells.

Authors :: Arif, Muhammad
Salvestrini, Jean-Paul
Streque, Jérémy
Jordan, Matthew B.
El Gmili, Youssef
Sundaram, Suresh
Xin Li
Patriarche, Gilles
Voss, Paul L.
Ougazzaden, Abdallah
Source :: Applied Physics Letters. 9/26/2016, Vol. 109 Issue 13, p133507-1-133507-4. 4p. 3 Diagrams, 1 Chart, 4 Graphs.
Publication Year :: 2016
Abstract: We study the influence of V-pits on the overall conversion efficiency of bulk In0.12Ga0.88N based heterojunction solar cells grown by MOVPE. We show that V-pits significantly enhances the extraction of the photogenerated carriers in the InGaN absorber, resulting in a peak external quantum efficiency of 79% and a short circuit current density (twice the state of the art) of 2.56 mA/cm-2 under AM 1.5G conditions. [ABSTRACT FROM AUTHOR]