Cite
Influence of Channel Length and High-K Oxide Thickness on Subthreshold DC Performance of Graded Channel and Gate Stack DG-MOSFETs.
MLA
Adak, Sarosij, et al. “Influence of Channel Length and High-K Oxide Thickness on Subthreshold DC Performance of Graded Channel and Gate Stack DG-MOSFETs.” NANO, vol. 11, no. 9, Sept. 2016, p. 1. EBSCOhost, https://doi.org/10.1142/S1793292016501010.
APA
Adak, S., Swain, S. K., Dutta, A., Rahaman, H., & Sarkar, C. K. (2016). Influence of Channel Length and High-K Oxide Thickness on Subthreshold DC Performance of Graded Channel and Gate Stack DG-MOSFETs. NANO, 11(9), 1. https://doi.org/10.1142/S1793292016501010
Chicago
Adak, Sarosij, Sanjit Kumar Swain, Arka Dutta, Hafizur Rahaman, and Chandan Kumar Sarkar. 2016. “Influence of Channel Length and High-K Oxide Thickness on Subthreshold DC Performance of Graded Channel and Gate Stack DG-MOSFETs.” NANO 11 (9): 1. doi:10.1142/S1793292016501010.