Enhanced photoelectrochemical performance of planar p-Silicon by APCVD deposition of surface mesoporous hematite coating.

Pt nanoparticles are the most frequently used catalyst for Si photocathode. Alternative catalyst based on transition metal or metal oxide as cathode catalyst is greatly desired to replace Pt. A mesoporous α-Fe 2 O 3 thin film (80 nm) was deposited on the surface of planar p-Si using a facile atmospheric pressure chemical vapor deposition (APCVD) method through pyrolysis of ferrocene. The planar Si photocathode shows a 400% enhancement in photocurrent at −1.0 V RHE and an anodic onset potential shift of 0.5 V upon deposition of surface mesoporous α-Fe 2 O 3 layer. This composite photoelectrode also shows superior photoelectrochemical performance to the Pt/planar Si photoelectrode. [ABSTRACT FROM AUTHOR]