Quantitative Fermi level tuning in amorphous organic semiconductor by molecular doping: Toward full understanding of the doping mechanism.

MLA

Jin-Peng Yang, et al. “Quantitative Fermi Level Tuning in Amorphous Organic Semiconductor by Molecular Doping: Toward Full Understanding of the Doping Mechanism.” Applied Physics Letters, vol. 109, no. 9, Aug. 2016, pp. 093302-1-093302-5. EBSCOhost, https://doi.org/10.1063/1.4962052.

APA

Jin-Peng Yang, Wen-Qing Wang, Bussolotti, F., Li-Wen Cheng, Yan-Qing Li, Satoshi Kera, Jian-Xin Tang, Xiang-Hua Zeng, & Nobuo Ueno. (2016). Quantitative Fermi level tuning in amorphous organic semiconductor by molecular doping: Toward full understanding of the doping mechanism. Applied Physics Letters, 109(9), 093302-1-093302-5. https://doi.org/10.1063/1.4962052

Chicago

Jin-Peng Yang, Wen-Qing Wang, Fabio Bussolotti, Li-Wen Cheng, Yan-Qing Li, Satoshi Kera, Jian-Xin Tang, Xiang-Hua Zeng, and Nobuo Ueno. 2016. “Quantitative Fermi Level Tuning in Amorphous Organic Semiconductor by Molecular Doping: Toward Full Understanding of the Doping Mechanism.” Applied Physics Letters 109 (9): 093302-1-093302-5. doi:10.1063/1.4962052.