Electric Field Effect on the Magnetization Process for a Very Thin Co60Fe40 Film.

The electric field effect on the magnetization process for a very thin Co60Fe40 film was studied. The magnetization process under the electric field was characterized using tunnel magnetoresistance curves measured in a fully-epitaxial (001)-oriented CoFe(1)/MgO/CoFe(3) (thickness in nanometers) magnetic tunnel junction, where both the CoFe electrodes are magnetized inplane. The out-of-plane saturation field of the thinner CoFe electrode changed linearly by varying the applied voltage, and the field-induced change of saturation field was estimated to be -0.10 TV-1. This change in the saturation field is interpreted as the electric field induced change in a perpendicular magnetic anisotropy originating from the CoFe/MgO interface. The electric field effect effciency was estimated to be about 200 fJV-1m-1. [ABSTRACT FROM AUTHOR]