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Growth and characterization of high transmittance GZO films prepared by sol-gel method.
- Source :
-
Thin Solid Films . Sep2016, Vol. 615, p19-24. 6p. - Publication Year :
- 2016
-
Abstract
- High transmittance Ga-doped ZnO thin films were deposited on glass substrates using sol-gel spin coating technique. Crystallinity levels, microstructures, optical and electrical properties of the thin films were systematically investigated by scanning electron microscope, X-ray diffractometer, UV–visible spectrophotometer, PL spectrometer and four-point probe method, respectively. All GZO thin films exhibited polycrystalline with a hexagonal wurtzite structure and slight (0 0 2) preferred orientation growth, which show excellent transmittance (> 95%) in the 380–780 nm wavelength range. The PL spectra of the GZO films revealed a strong ultraviolet emission peaks at around 393 nm and a weak blue emission peak at around 468 nm. When the Ga doping level was 4 at.%, the minimum resistivity of 1.12 × 10 − 2 Ω·cm with the highest transmittance was reached. The optical band gaps ( E g ) of the films were increased from 3.311 eV to 3.329 eV with the increase of Ga dopant concentration. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00406090
- Volume :
- 615
- Database :
- Academic Search Index
- Journal :
- Thin Solid Films
- Publication Type :
- Academic Journal
- Accession number :
- 117645151
- Full Text :
- https://doi.org/10.1016/j.tsf.2016.06.048