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Development of hard X-ray photoelectron SPLEED-based spectrometer applicable for probing of buried magnetic layer valence states.

Authors :
Kozina, Xeniya
Ikenaga, Eiji
Viol Barbosa, Carlos Eduardo
Ouardi, Siham
Karel, Julie
Yamamoto, Masafumi
Kobayashi, Keisuke
Elmers, Hans Joachim
Schönhense, Gerd
Felser, Claudia
Source :
Journal of Electron Spectroscopy & Related Phenomena. Aug2016, Vol. 211, p12-18. 7p.
Publication Year :
2016

Abstract

A novel design of high-voltage compatible polarimeter for spin-resolved hard X-ray photoelectron spectroscopy (Spin-HAXPES) went into operation at beamline BL09XU of SPring-8 in Hyogo, Japan. The detector is based on the well-established principle of electron diffraction from a W(001) single-crystal at a scattering energy of 103.5 eV. It's special feature is that it can be operated at a high negative bias potential up to 10 kV, necessary to access the HAXPES range. The polarimeter is operated behind a large hemispherical analyzer (Scienta R-4000). It was optimized for high transmission of the transfer optics. A delay-line detector (20 mm dia.) is positioned at the exit plane of the analyzer enabling conventional multichannel intensity spectroscopy simultaneously with single-channel spin analysis. The performance of the combined setup is demonstrated by the spin-resolved data for the valence-region of a FeCo functional layer of a tunneling device, buried beneath 3 nm of oxidic material. The well-structured spin polarization spectrum validates Spin-HAXPES in the valence energy range as powerful method for bulk electronic structure analysis. The spin polarization spectrum exhibits a rich structure, originating from clearly discernible transitions in the majority and minority partial spin spectra. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
03682048
Volume :
211
Database :
Academic Search Index
Journal :
Journal of Electron Spectroscopy & Related Phenomena
Publication Type :
Academic Journal
Accession number :
117292795
Full Text :
https://doi.org/10.1016/j.elspec.2016.05.001