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Response to “Comment on ‘Enhancement of Schottky barrier height on AlGaN/GaN heterostructure by oxidation annealing’ ” [Appl. Phys. Lett. 83, 5319 (2003)].
- Source :
-
Applied Physics Letters . 12/22/2003, Vol. 83 Issue 25, p5321-5321. 1p. - Publication Year :
- 2003
-
Abstract
- Responds to the comments on the article "Enhancement of Schottky barrier height on AlGaN/GaN heterostructure by oxidation annealing" in the "Applied Physics Letters" journal. Recognition of the improvement in the barrier height due to oxidation annealing; Demonstration of the core level and valance band spectra shift with the aqua-regia treatment; Decrease of the electron affinity of AlGaN.
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 83
- Issue :
- 25
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 11713175
- Full Text :
- https://doi.org/10.1063/1.1634694