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Large-Signal Model of Graphene Field-Effect Transistors—Part I: Compact Modeling of GFET Intrinsic Capacitances.
- Source :
-
IEEE Transactions on Electron Devices . Jul2016, Vol. 63 Issue 7, p2936-2941. 6p. - Publication Year :
- 2016
-
Abstract
- We present a circuit-compatible compact model of the intrinsic capacitances of GFETs. Together with a compact drain current model, a large-signal model is developed combining both models as a tool for simulating the electrical behavior of graphene-based integrated circuits, dealing with the dc, transient behavior, and frequency response of the circuit. The drain current model is based on a drift-diffusion mechanism for the carrier transport coupled with an appropriate field-effect approach. The intrinsic capacitance model consists of a 16-capacitance matrix including self-capacitances and transcapacitances of a four-terminal GFET. To guarantee charge conservation, a Ward–Dutton linear charge partition scheme has been used. The large-signal model has been implemented in Verilog-A, being compatible with conventional circuit simulators and serving as a starting point toward the complete GFET device model that could incorporate additional nonidealities. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 63
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 116318760
- Full Text :
- https://doi.org/10.1109/TED.2016.2570426