Effects of LaNiO[sub 3] on the structures and properties of SrBi[sub 2]Ta[sub 2]O[sub 9] thin films.

SrBi[sub 2]Ta[sub 2]O[sub 9](SBT)/LaNiO[sub 3](LNO)/Si and SBT/Pt/TiO[sub 2]/SiO[sub 2]/Si multilayers were fabricated by pulsed laser deposition. With Pt top electrodes, the measured remanent polarization (2P[sub r]) of Pt/SBT/LNO/Si and Pt/SBT/Pt/TiO[sub 2]/SiO[sub 2]/Si capacitors was 6.5 μC/cm[sup 2] and 5.2 μC/cm[sup 2], respectively. Using LNO as both bottom electrodes and buffer layers, enhanced non-c-axis crystalline SBT films were induced, which resulted in a 2P[sub r] greater than that of the Pt/SBT/Pt/TiO[sub 2]/SiO[sub 2]/Si capacitor. The hysteresis loop of the Pt/SBT/LNO/Si capacitor showed a great external-field-dependent horizontal shift. Using an electron-injection model, this dependence was addressed. The fatigue-free property of the Pt/SBT/LNO/Si capacitor was experimentally established, in that the non-volatile polarization decreased by less than 5% of the initial value after 1.44×10[sup 9] switching cycles . [ABSTRACT FROM AUTHOR]