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Improved Sensitivity and Durability of Poly(3-Hexylthiophene)-Based Polymeric Photodetectors Using Indium Tin Oxide Modified by Phosphonic Acid-Based Self-Assembled Monolayer Treatment.
- Source :
-
Electronics & Communications in Japan . Jul2016, Vol. 99 Issue 7, p48-54. 7p. - Publication Year :
- 2016
-
Abstract
- SUMMARY Organic photodetectors based on poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C61-butyric acid methyl ester (PCBM) blends with indium tin oxide (ITO) modified by phosphonic acid-based self-assembled monolayer (SAM) treatment in a short time are investigated. The mixed SAMs serve to tune the surface free energy and the work function of ITO by varying the blend ratio. The phosphonic acid-based SAM treatment results not only in lowering of the injection barrier at the ITO/organic layer interface but also in the lowering of the contact resistance between ITO and the organic layer, as shown by impedance spectroscopy in P3HT hole-only device with SAMs. P3HT:PCBM device with ITO modified by short treatment time of 1H,1H,2H,2H-perfluorooctane-phosphonic acid exhibits an incident-photon-to-current conversion efficiency of above 50% at -2 V, a high on/off ratio, and improved durability. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 19429533
- Volume :
- 99
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- Electronics & Communications in Japan
- Publication Type :
- Academic Journal
- Accession number :
- 116123212
- Full Text :
- https://doi.org/10.1002/ecj.11828