Back to Search
Start Over
RF Modeling of FDSOI Transistors Using Industry Standard BSIM-IMG Model.
- Source :
-
IEEE Transactions on Microwave Theory & Techniques . 6/1/2016, Vol. 64 Issue 6, p1745-1751. 7p. - Publication Year :
- 2016
-
Abstract
- In this paper, RF modeling and step-by-step parameter extraction methodology of the BSIM-IMG model are discussed with experimental data. BSIM-IMG is the latest industry standard surface potential based model for fully depleted silicon-on-insulator (FDSOI) transistors. The impact of gate, substrate, and thermal networks is demonstrated with S-parameter data, which enable the BSIM-IMG model to capture RF behavior of the FDSOI transistor. The model is validated over a wide range of biases and frequencies and excellent agreement with the experimental data is obtained. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189480
- Volume :
- 64
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Microwave Theory & Techniques
- Publication Type :
- Academic Journal
- Accession number :
- 116115958
- Full Text :
- https://doi.org/10.1109/TMTT.2016.2557327