Magnetic and transport properties of the V[sub 2]–VI[sub 3] diluted magnetic semiconductor Sb[sub 2-x]Mn[sub x]Te[sub 3].

We have measured electrical and magnetic properties of single crystals of Sb[sub 2-x]Mn[sub x]Te[sub 3] with x=0–0.045 at temperatures of 2 K to 300 K. Hall effect measurements indicate that each manganese atom donates approximately one hole to the valence band. The magnetic susceptibility is paramagnetic down to 2 K, and both Curie–Weiss and Brillouin analyses show that manganese substitutes for Sb and takes the Mn[sup 2+] state with S=5/2. Contrary to the case of III–V host matrices, manganese does not stimulate ferromagnetic order in the family of bulk layered V[sub 2]–VI[sub 3] diluted magnetic semiconductors, at least in the range of magnetic impurity and carrier concentrations studied here. © 2003 American Institute of Physics. [ABSTRACT FROM AUTHOR]