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Beyond Thermal Management: Incorporating p-Diamond Back-Barriers and Cap Layers Into AlGaN/GaN HEMTs.
- Source :
-
IEEE Transactions on Electron Devices . Jun2016, Vol. 63 Issue 6, p2340-2345. 6p. - Publication Year :
- 2016
-
Abstract
- This work explores the use of p-diamond back-barriers (BBs) and cap layers to enhance the performance of GaN-based high electron mobility transistors (HEMTs). Diamond can offer a heavily doped p-type layer, which is complementary to GaN electronics. Self-consistent electrothermal simulations reveal that the use of p-diamond BBs and cap layers can increase the breakdown voltage of GaN-based HEMTs by fourfold, at the same time that they enhance the 2-D-electron-gas confinement and reduce short channel effects. These results highlight that p-diamond layers can improve the performance of GaN HEMTs for high-power and high-frequency applications beyond the thermal improvements pursued until now. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 63
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 115559745
- Full Text :
- https://doi.org/10.1109/TED.2016.2553136