Charge Collection Mechanisms in GaAs MOSFETs.

Charge collection mechanisms are investigated in surface channel GaAs MOSFETs under broadbeam heavy ion irradiation and pulsed two-photon-absorption laser irradiation. The large barrier between the gate dielectric and GaAs eliminates gate conduction current, but there is significant gate displacement current. Charge enhancement occurs because radiation-generated holes accumulate in the substrate, which increases the local electrostatic potential. The increased potential enhances the source-to-drain current, resulting in excess collected charge. The collected charge increases significantly with gate bias, due to the long tails of the charge waveforms that occur for higher gate bias. The collected charge increases with increasing drain bias. [ABSTRACT FROM PUBLISHER]