Electron impact ionization cross sections of the ground and excited levels of Se3+.

Electron impact single ionization cross sections are theoretically investigated from the ionization threshold to 1000 eV for the levels belonging to the ground and two lowest excited configurations of ([ Ni ])4 s 2 4 p , 4 s 4 p 2 , and 4 s 2 4 d of Se 3+ using a detailed level-to-level distorted-wave formalism. The ionization cross sections of the two levels belonging to the configuration of 4 s 2 4 p are nearly equivalent and so are 4 s 2 4 d , whereas large difference is found for the eight levels of 4 s 4 p 2 . The theoretical results are utilized to analyze and interpret a recent experimental measurement for the single-ionization cross section of Se 3+ (Alna’washi et al., 2014). The population distributions existed in this experiment are deduced. Except for the levels of the ground configuration, there exist populations from levels of the excited configuration of 4 s 2 4 d . [ABSTRACT FROM AUTHOR]