Supersensitive graphene-based gas sensor.

Epitaxial graphene layers are produced with the aid of thermal destruction of the surface of a semi-insulating SiC substrate. Raman spectroscopy and atomic-force microscopy are employed in the study of the film homogeneity. A prototype of the gas sensor based on the films is fabricated. The device is sensitive to the NO molecules at a level of 5 ppb (five particles per billion). A possibility of the industrial application of the sensor is discussed. [ABSTRACT FROM AUTHOR]