Epitaxial growth of [formula omitted] β-Ga2O3 on (0001) sapphire substrates by halide vapour phase epitaxy.

Authors :: Nikolaev, V.I.
Pechnikov, A.I.
Stepanov, S.I.
Nikitina, I.P.
Smirnov, A.N.
Chikiryaka, A.V.
Sharofidinov, S.S.
Bougrov, V.E.
Romanov, A.E.
Source :: Materials Science in Semiconductor Processing. Jun2016, Vol. 47, p16-19. 4p.
Publication Year :: 2016
Abstract: We report on Ga 2 O 3 deposition on c-plane sapphire substrates by hydride vapour phase epitaxy using metallic gallium, hydrogen chloride and dry air as precursors. High deposition rate up to 250 µm/h has been realized. As confirmed by X-ray diffraction and micro-Raman measurements, produced films consisted of pure monoclinic β-Ga 2 O 3 phase and were (−201) oriented. The full width at half maximum (FWHM) for (−201) rocking curve was decreasing with increasing GaCl flow. The narrowest FWHM of 20 arcmin has been detected. [ABSTRACT FROM AUTHOR]

Subjects :: *GALLIUM compounds
*VAPOR phase epitaxial growth
*SAPPHIRES
*SUBSTRATES (Materials science)
*HYDROGEN chloride
*X-ray diffraction

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