Characterization of (Bi, La) 4 Ti 3 O 12 Film Formed on Pt Electrode with (Cr, Ti)N/TiN/Ti Barrier Layers.

Ferroelectric Bi 3.35 La 0.75 Ti 3 O 12 (BLT) film was prepared by using a sol-gel method on Pt electrode with (Cr, Ti)N/TiN/Ti barrier layers. The BLT films crystallized by conventional annealing conditions (700°C, 30 min, 0.8°C/sec, O 2 ) showed hysteretic polarization-voltage ( P-V ) curves, but the leakage current density was high. Thus, a flash-annealing method (750°C 30 sec, 70°C/sec, O 2 ) was attempted to minimize the thermal budget to the ferroelectric films and the underlying structures. It was found in this method that the leakage current was remarkably decreased from 40.9 μA/cm 2 to 322 nA/cm 2 at an applied voltage of 3 V. Furthermore, X-ray diffraction peak intensity of the perovskite-type BLT phase was much stronger in the BLT film crystallized by the flash-annealing method. [ABSTRACT FROM AUTHOR]