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Graphene Doping Improved Device Performance of ZnMgO/PbS Colloidal Quantum Dot Photovoltaics.

Authors :
Hu, Long
Li, Deng‐Bing
Gao, Liang
Tan, Hua
Chen, Chao
Li, Kanghua
Li, Min
Han, Jun‐Bo
Song, Haisheng
Liu, Huan
Tang, Jiang
Source :
Advanced Functional Materials. 3/22/2016, Vol. 26 Issue 12, p1899-1907. 9p.
Publication Year :
2016

Abstract

Lead sulfide (PbS) colloidal quantum dots (CQDs) solar cells possess the advantages of absorption into the infrared, solution processing, and multiple exciton generation, making them very competitive as a low-cost photovoltaic alternative. Employing an n-i-p ZnO/tetrabutylammonium (TBAI)-PbS/ethanedithiol (EDT)-PbS device configuration, the present study reports a 9.0% photovoltaic device through ZnMgO electrode engineering and graphene doping. Sol-gel-derived Zn0.9Mg0.1O buffer layer shows better transparency and higher conduction band maximum than ZnO, and incorporation of graphene and chlorinated graphene oxide into the TBAI-PbS and EDT-PbS layer respectively boosts carrier collection, leading to device with significantly enhanced open circuit voltage and short-circuit current density. It is believed that incorporation of graphene into PbS CQD film as proposed here, and more generally nanosheets of other materials, would potentially open a simple and powerful avenue to overcome the carrier transport bottleneck of CQD optoelectronic device, thus pushing device performance to a new level. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
1616301X
Volume :
26
Issue :
12
Database :
Academic Search Index
Journal :
Advanced Functional Materials
Publication Type :
Academic Journal
Accession number :
113902910
Full Text :
https://doi.org/10.1002/adfm.201505043