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Observation of dopant-profile independent electron transport in sub-monolayer TiOx stacked ZnO thin films grown by atomic layer deposition.
- Source :
-
Applied Physics Letters . 1/18/2016, Vol. 108 Issue 3, p1-5. 5p. 1 Chart, 3 Graphs. - Publication Year :
- 2016
-
Abstract
- Dopant-profile independent electron transport has been observed through a combined study of temperature dependent electrical resistivity and magnetoresistance measurements on a series of Ti incorporated ZnO thin films with varying degree of static-disorder. These films were grown by atomic layer deposition through in-situ vertical stacking of multiple sub-monolayers of TiOx in ZnO. Upon decreasing ZnO spacer layer thickness, electron transport smoothly evolved from a good metallic to an incipient non-metallic regime due to the intricate interplay of screening of spatial potential fluctuations and strength of static-disorder in the films. Temperature dependent phase-coherence length as extracted from the magnetotransport measurement revealed insignificant role of inter sub-monolayer scattering as an additional channel for electron dephasing, indicating that films were homogeneously disordered three-dimensional electronic systems irrespective of their dopant-profiles. Results of this study are worthy enough for both fundamental physics perspective and efficient applications of multi-stacked ZnO/TiOx structures in the emerging field of transparent oxide electronics. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 108
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 112459161
- Full Text :
- https://doi.org/10.1063/1.4939926