Characterizations of an X-ray detector based on a Zn2SiO4 film.

We have fabricated the X-ray detector based on the α- Zn 2 SiO 4 film. The Zn 2 SiO 4 film was prepared by the solid state reaction of ZnO film and quartz substrate at 1200 °C. The fabricated detector has a rapid and steady response to X-ray irradiation and shows a light-to-dark-current ratio more than 10 3 under the applied bias of 30 ∼ 200 V (dose rate 0.415 Gy/s). The response current increases sublinearly with the X-ray intensity which can be attributed to trap centers in the film. It is indicated that Zn 2 SiO 4 can be a candidate material for the development of compound semiconductor X-ray detector. [ABSTRACT FROM AUTHOR]