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Investigation of Unoccupied Electronic States near the Fermi Level of Polysilane using Resonant Auger Spectroscopy.
- Source :
-
Molecular Crystals & Liquid Crystals . 2015, Vol. 622 Issue 1, p164-169. 6p. - Publication Year :
- 2015
-
Abstract
- Unoccupied electronic states near the Fermi level of poly(dimethylsilane) were probed using Si 1sX-ray absorption spectroscopy (XAS) and SiKL2,3L2,3resonant Auger spectroscopy (RAS). The measured resonance peaks of XAS spectra near SiK-edge have been assigned in comparison with the discrete variational (DV)-Xα molecular orbital calculations. The rapid delocalization of Si 1score-excited electron through the empty conduction band was observed along the polymer chain with the energy-dependent RAS measurement, and the electron delocalization time was estimated based on the core-hole clock method. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 15421406
- Volume :
- 622
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Molecular Crystals & Liquid Crystals
- Publication Type :
- Academic Journal
- Accession number :
- 111728849
- Full Text :
- https://doi.org/10.1080/15421406.2015.1105081