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Magnetic-field sensors based on anisotropic magnetoresistive thin-film structures for operation in a wide temperature range.

Authors :
Djuzhev, N.
Mazurkin, N.
Pozdnyakov, V.
Iurov, A.
Chinenkov, M.
Source :
Semiconductors. Dec2015, Vol. 49 Issue 13, p1739-1742. 4p.
Publication Year :
2015

Abstract

The results of studies on the fabrication and optimization of the configuration of magnetic-field sensors based on anisotropic magnetoresistive thin-film structures are described. Magnetic-field sensors with an odd characteristic and a sensitivity to 23.7 (mV/V)/(kA/m) and a 180° angle-rotation sensor with a signal amplitude of 15 mV/V are obtained. Based on the performed thermal tests, the possibility of applying the developed sensors in extreme environments in the temperature range from -60 to +150°C is shown, and the temperature-sensitivity coefficient amounts to -0.35%/°C. The obtained sensors are tested in angle, speed, and phase sensors in the automobile industry. The characteristics of the developed sensors correspond to the analogues of leading world firms. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
10637826
Volume :
49
Issue :
13
Database :
Academic Search Index
Journal :
Semiconductors
Publication Type :
Academic Journal
Accession number :
111727928
Full Text :
https://doi.org/10.1134/S1063782615130060