Conspicuous current dependence of the emission energy from InxGa1−xN/GaN quantum well diodes.

The emission spectrum of the conventional InGaN/GaN quantum well (QW) diode changes remarkably with the operating current. The degree of change depends on the constituent parameters of the QW. A detailed investigation has been carried out through the self-consistent solutions of the Schrödinger and Poisson equations to elucidate the change of the emission energy and the transition probability with the operating current and to explore how the changes depend on the well width of the QW and the In mole fraction. It is found that choosing suitable values of the mentioned parameters, the emission energy may be kept almost constant with current, or it may be tuned over a wide range through current. The two possibilities have immense importance for optoelectronic device applications. [ABSTRACT FROM AUTHOR]