Amorphous semiconductor mobility limits.

A physics-based model for electron and hole mobility in an amorphous semiconductor is developed to estimate the mobility limits of an amorphous semiconductor. The model involves band tail state trapping of a diffusive (Brownian motion) mobility and accounts for both drift- and diffusion-induced transport, as normally encountered in the operation of a thin-film transistor. Employing this model leads to a predicted maximum mobility of ~70 cm 2 V -1 s -1 (~10 cm 2 V -1 s -1 ) for electrons (holes). [ABSTRACT FROM AUTHOR]