High performance of Trigate Junctionless nanowire MOSFET with P+ Sidewall.

The performance for P + Sidewall Trigate Junctionless nanowire MOSFET is investigated. The new device has a P + sidewall near the source. A comprehensive device comparison includes the subthreshold slope (SS), Drain-induced barrier lowering (DIBL) and the stability for threshold voltage (V TH ). High performance for SS and low leakage currents can be achieved by P + sidewall JL. As a result, SS nearly at 70 mV/dec, I ON /I OFF > 10 6 , and DIBL nearly at 60 mV are achieved at L G = 10 nm for P + sidewall JL NMOSFET, which is the highlighting excellent electrostatic performance for trigate JL NW MOSFEETs. [ABSTRACT FROM AUTHOR]